STW20NM50FD

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 500 V, 250 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

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STW20NM50FD

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 500 V, 250 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW20NM50FD

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1380 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs [Max]	250 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW20NK50Z Series

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Power Dissipation (Max) [Max]
STMicroelectronics STW20NM60FD	1300 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	214 W	600 V	150 °C	-65 °C	Through Hole	30 V	TO-247-3	290 mOhm	N-Channel	5 V
STMicroelectronics STW20NM50FD	1380 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	214 W	500 V			Through Hole	30 V	TO-247-3		N-Channel	5 V	53 nC	250 mOhm	150 °C
STMicroelectronics STW20NK50Z	2600 pF	MOSFET (Metal Oxide)	17 A	10 V	TO-247-3		500 V			Through Hole	30 V	TO-247-3	270 mOhm	N-Channel	4.5 V	119 nC		150 °C	190 W
STMicroelectronics STW20NM60	1500 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	192 W	600 V			Through Hole	30 V	TO-247-3	290 mOhm	N-Channel	5 V	54 nC		150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 6.80
		10	$ 6.71
		25	$ 4.45
		100	$ 4.15
		250	$ 3.84
Digikey	Tube	1	$ 7.66
		30	$ 6.12
		120	$ 5.47
		510	$ 4.83
		1020	$ 4.35
		2010	$ 4.07
Newark	Each	1	$ 7.81
		10	$ 6.73
		25	$ 5.87
		50	$ 5.45
		100	$ 4.75
		250	$ 4.05

Description

General part information

STW20NK50Z Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.