STW20NK50Z

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STMicroelectronics

N-CHANNEL 500 V, 0.23 OHM, 20 A SUPERMESH(TM) POWER MOSFET ZENER-PROTECTED IN TO-247 PACKAGE

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STW20NK50Z

Active

STMicroelectronics

N-CHANNEL 500 V, 0.23 OHM, 20 A SUPERMESH(TM) POWER MOSFET ZENER-PROTECTED IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW20NK50Z

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	119 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STW20NK50Z Series

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Power Dissipation (Max) [Max]
STMicroelectronics STW20NM60FD	1300 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	214 W	600 V	150 °C	-65 °C	Through Hole	30 V	TO-247-3	290 mOhm	N-Channel	5 V
STMicroelectronics STW20NM50FD	1380 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	214 W	500 V			Through Hole	30 V	TO-247-3		N-Channel	5 V	53 nC	250 mOhm	150 °C
STMicroelectronics STW20NK50Z	2600 pF	MOSFET (Metal Oxide)	17 A	10 V	TO-247-3		500 V			Through Hole	30 V	TO-247-3	270 mOhm	N-Channel	4.5 V	119 nC		150 °C	190 W
STMicroelectronics STW20NM60	1500 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	192 W	600 V			Through Hole	30 V	TO-247-3	290 mOhm	N-Channel	5 V	54 nC		150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.90
		10	$ 3.25
		100	$ 2.31
		500	$ 1.91
		1000	$ 1.78
		2000	$ 1.77
Newark	Each	1	$ 5.07
		10	$ 4.30
		100	$ 2.89
		500	$ 2.72
		1200	$ 2.54
		3000	$ 2.40

Description

General part information

STW20NK50Z Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet