STW20NK50Z Series

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Catalog

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Power Dissipation (Max) [Max]
STMicroelectronics STW20NM60FD	1300 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	214 W	600 V	150 °C	-65 °C	Through Hole	30 V	TO-247-3	290 mOhm	N-Channel	5 V
STMicroelectronics STW20NM50FD	1380 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	214 W	500 V			Through Hole	30 V	TO-247-3		N-Channel	5 V	53 nC	250 mOhm	150 °C
STMicroelectronics STW20NK50Z	2600 pF	MOSFET (Metal Oxide)	17 A	10 V	TO-247-3		500 V			Through Hole	30 V	TO-247-3	270 mOhm	N-Channel	4.5 V	119 nC		150 °C	190 W
STMicroelectronics STW20NM60	1500 pF	MOSFET (Metal Oxide)	20 A	10 V	TO-247-3	192 W	600 V			Through Hole	30 V	TO-247-3	290 mOhm	N-Channel	5 V	54 nC		150 °C

Catalog

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Description

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.