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STW20NM60FD - TO-247-3 HiP

STW20NM60FD

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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STW20NM60FD - TO-247-3 HiP

STW20NM60FD

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW20NM60FD
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1300 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-247-3
Power Dissipation (Max)214 W
Rds On (Max) @ Id, Vgs290 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.50
30$ 3.84
120$ 3.38
510$ 3.14
NewarkEach 1$ 7.60
10$ 6.55
25$ 5.22
60$ 4.88
120$ 4.54
270$ 3.94

Description

General part information

STW20NK50Z Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Documents

Technical documentation and resources