Specification	TSM10ND60CI

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	1928 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Package Name	ITO-220
Power Dissipation (Max)	56.8 W
Rds On (Max)	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	3.8 V

TSM10 Series

Part	Technology	Vgs(th) (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package Name	FET Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)
Taiwan Semiconductor Corporation TSM10N80CZ C0G	MOSFET (Metal Oxide)	4 V	1.05 Ohm	-55 °C	150 °C	Through Hole	TO-220-3	30 V	10 V	290 W	2336 pF	TO-220	N-Channel	9.5 A	800 V	53 nC
Taiwan Semiconductor Corporation TSM10N80CI C0G	MOSFET (Metal Oxide)	4 V	1.05 Ohm	-55 °C	150 °C	Through Hole	Isolated Tab TO-220-3 Full Pack	30 V	10 V	48 W	2336 pF	ITO-220AB	N-Channel	9.5 A	800 V	53 nC
Taiwan Semiconductor Corporation TSM10NC60CF C0G	MOSFET (Metal Oxide)	4.5 V	750 mOhm	-55 °C	150 °C	Through Hole	TO-220-3 Full Pack	30 V	10 V	45 W	1652 pF	ITO-220S	N-Channel	10 A	600 V	33 nC
Taiwan Semiconductor Corporation TSM10ND60CI	MOSFET (Metal Oxide)	3.8 V	600 mOhm	-55 °C	150 °C	Through Hole	Isolated Tab TO-220-3 Full Pack	30 V	10 V	56.8 W	1928 pF	ITO-220	N-Channel	10 A	600 V	38 nC
Taiwan Semiconductor Corporation TSM10ND65CI	MOSFET (Metal Oxide)	3.8 V	800 mOhm	-55 °C	150 °C	Through Hole	Isolated Tab TO-220-3 Full Pack	30 V	10 V	56.8 W	1863 pF	ITO-220	N-Channel	10 A	650 V	39.6 nC
Taiwan Semiconductor Corporation TSM10NC65CF C0G	MOSFET (Metal Oxide)	4.5 V	900 mOhm	-55 °C	150 °C	Through Hole	TO-220-3 Full Pack	30 V	10 V	45 W	1650 pF	ITO-220S	N-Channel	10 A	650 V	34 nC

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