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TSM10ND65CI - TSM7ND65CI

TSM10ND65CI

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Taiwan Semiconductor Corporation

650V, 10A, SINGLE N-CHANNEL POW

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TSM10ND65CI - TSM7ND65CI

TSM10ND65CI

Active
Taiwan Semiconductor Corporation

650V, 10A, SINGLE N-CHANNEL POW

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM10ND65CI
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]39.6 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)56.8 W
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageITO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 4000$ 2.02

Description

General part information

TSM10 Series

N-Channel 650 V 10A (Tc) 56.8W (Tc) Through Hole ITO-220

Documents

Technical documentation and resources

No documents available