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TSM10N80CI C0G - ITO220AB

TSM10N80CI C0G

Obsolete
Taiwan Semiconductor Corporation

MOSFET N-CH 800V 9.5A ITO220AB

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TSM10N80CI C0G - ITO220AB

TSM10N80CI C0G

Obsolete
Taiwan Semiconductor Corporation

MOSFET N-CH 800V 9.5A ITO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM10N80CI C0G
Current - Continuous Drain (Id) @ 25°C9.5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC
Input Capacitance (Ciss) (Max) @ Vds2336 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)48 W
Rds On (Max) @ Id, Vgs1.05 Ohm
Supplier Device PackageITO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

TSM10 Series

N-Channel 800 V 9.5A (Tc) 48W (Tc) Through Hole ITO-220AB

Documents

Technical documentation and resources

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