TSM10 Series

Catalog

MOSFET N-CH 800V 9.5A TO220

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM10N80CZ C0G	290 W	1.05 Ohm	30 V	-55 °C	150 °C	TO-220-3	2336 pF	TO-220	800 V	Through Hole	MOSFET (Metal Oxide)	53 nC	4 V	10 V	N-Channel	9.5 A
Taiwan Semiconductor Corporation TSM10N80CI C0G	48 W	1.05 Ohm	30 V	-55 °C	150 °C	TO-220-3 Full Pack Isolated Tab	2336 pF	ITO-220AB	800 V	Through Hole	MOSFET (Metal Oxide)	53 nC	4 V	10 V	N-Channel	9.5 A
Taiwan Semiconductor Corporation TSM10NC60CF C0G	45 W		30 V	-55 °C	150 °C	TO-220-3 Full Pack	1652 pF	ITO-220S	600 V	Through Hole	MOSFET (Metal Oxide)		4.5 V	10 V	N-Channel	10 A	750 mOhm
Taiwan Semiconductor Corporation TSM10ND65CI	56.8 W	800 mOhm	30 V	-55 °C	150 °C	TO-220-3 Full Pack Isolated Tab		ITO-220	650 V	Through Hole	MOSFET (Metal Oxide)		3.8 V	10 V	N-Channel	10 A		39.6 nC