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TSM10NC60CF C0G - TO-220-3FP

TSM10NC60CF C0G

Obsolete
Taiwan Semiconductor Corporation

MOSFET N-CH 600V 10A ITO220S

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TSM10NC60CF C0G - TO-220-3FP

TSM10NC60CF C0G

Obsolete
Taiwan Semiconductor Corporation

MOSFET N-CH 600V 10A ITO220S

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM10NC60CF C0G
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1652 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs [Max]750 mOhm
Supplier Device PackageITO-220S
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TSM10 Series

N-Channel 600 V 10A (Tc) 45W (Tc) Through Hole ITO-220S

Documents

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