IPDQ60R017S7XTMA1

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Infineon Technologies

INFINEON’S LOWEST RDS(ON) 600 V SJ MOSFET IN THE NOVEL TOP-SIDE- COOLED QDPAK PACKAGE, IDEAL FOR LOW-FREQUENCY SWITCHING APPLICATIONS AND SOLID-STATE SOLUTIONS

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IPDQ60R017S7XTMA1

Active

Infineon Technologies

INFINEON’S LOWEST RDS(ON) 600 V SJ MOSFET IN THE NOVEL TOP-SIDE- COOLED QDPAK PACKAGE, IDEAL FOR LOW-FREQUENCY SWITCHING APPLICATIONS AND SOLID-STATE SOLUTIONS

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPDQ60R017S7XTMA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	196 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	22-PowerBSOP Module
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	PG-HDSOP-22-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPDQ60R Series

Part	Technology	Package / Case	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Grade	Qualification	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPDQ60R035CFD7XTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V
Infineon Technologies IPDQ60R010S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	10 mOhm	4.5 V	318 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101	694 W	11987 pF	50 A	20 V
Infineon Technologies IPDQ60R040S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	40 mOhm	4.5 V	83 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101			14 A	20 V	272 W
Infineon Technologies IPDQ60R022S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	22 mOhm	4.5 V	150 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101			24 A	20 V	416 W
Infineon Technologies IPDQ60R017S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	17 mOhm	4.5 V		150 °C	-40 °C	12 V 12 V	N-Channel					30 A	20 V	500 W	7370 pF	196 nC
Infineon Technologies IPDQ60R017S7XTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	17 mOhm	4.5 V		150 °C	-55 °C	12 V 12 V	N-Channel					30 A	20 V	500 W	7370 pF	196 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 15.19
		10	$ 13.38
		100	$ 11.57
	Digi-Reel®	1	$ 15.19
		10	$ 13.38
		100	$ 11.57
	Tape & Reel (TR)	750	$ 10.49
Newark	Each (Supplied on Cut Tape)	1	$ 13.17
		10	$ 11.56
		25	$ 11.55
		50	$ 10.77
		100	$ 9.99
		250	$ 9.68
		500	$ 9.67
		1500	$ 9.65

Description

General part information

IPDQ60R Series

The600 V CoolMOS™ S7 SJ MOSFET familyis optimized for low conduction losses and features the lowest RDS(on)in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on)x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies.

Documents

Technical documentation and resources