IPDQ60R035CFD7XTMA1

Active

Infineon Technologies

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPDQ60R035CFD7XTMA1

Active

Infineon Technologies

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPDQ60R035CFD7XTMA1

Drain to Source Voltage (Vdss)	600 V
Mounting Type	Surface Mount
Package / Case	22-PowerBSOP Module
Supplier Device Package	PG-HDSOP-22-1
Technology	MOSFET (Metal Oxide)

IPDQ60R Series

Part	Technology	Package / Case	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Grade	Qualification	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPDQ60R035CFD7XTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V
Infineon Technologies IPDQ60R010S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	10 mOhm	4.5 V	318 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101	694 W	11987 pF	50 A	20 V
Infineon Technologies IPDQ60R040S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	40 mOhm	4.5 V	83 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101			14 A	20 V	272 W
Infineon Technologies IPDQ60R022S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	22 mOhm	4.5 V	150 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101			24 A	20 V	416 W
Infineon Technologies IPDQ60R017S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	17 mOhm	4.5 V		150 °C	-40 °C	12 V 12 V	N-Channel					30 A	20 V	500 W	7370 pF	196 nC
Infineon Technologies IPDQ60R017S7XTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	17 mOhm	4.5 V		150 °C	-55 °C	12 V 12 V	N-Channel					30 A	20 V	500 W	7370 pF	196 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 8.45
		10	$ 6.56
		25	$ 6.08
		100	$ 5.56
		250	$ 5.32
	Digi-Reel®	1	$ 8.45
		10	$ 6.56
		25	$ 6.08
		100	$ 5.56
		250	$ 5.32
	Tape & Reel (TR)	750	$ 5.09
		1500	$ 4.98
Newark	Each (Supplied on Cut Tape)	1	$ 9.10
		10	$ 7.29
		25	$ 6.77
		50	$ 6.49
		100	$ 6.20
		250	$ 5.92
		500	$ 5.68
		1500	$ 5.43

Description

General part information

IPDQ60R Series

The600 V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market

Documents

Technical documentation and resources