IPDQ60R Series

Catalog

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

Part	Technology	Package / Case	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Grade	Qualification	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPDQ60R035CFD7XTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V
Infineon Technologies IPDQ60R010S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	10 mOhm	4.5 V	318 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101	694 W	11987 pF	50 A	20 V
Infineon Technologies IPDQ60R040S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	40 mOhm	4.5 V	83 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101			14 A	20 V	272 W
Infineon Technologies IPDQ60R022S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	22 mOhm	4.5 V	150 nC	150 °C	-40 °C	12 V 12 V	N-Channel	Automotive	AEC-Q101			24 A	20 V	416 W
Infineon Technologies IPDQ60R017S7AXTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	17 mOhm	4.5 V		150 °C	-40 °C	12 V 12 V	N-Channel					30 A	20 V	500 W	7370 pF	196 nC
Infineon Technologies IPDQ60R017S7XTMA1	MOSFET (Metal Oxide)	22-PowerBSOP Module	Surface Mount	PG-HDSOP-22-1	600 V	17 mOhm	4.5 V		150 °C	-55 °C	12 V 12 V	N-Channel					30 A	20 V	500 W	7370 pF	196 nC