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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
ON SemiconductorUJ3C120150K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 150 mohm, 1200V, TO-247-3L | Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUJ3D06504TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 4A, 650V SiC Merged PiN-Schottky (MPS) Diode | Discrete power modules | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06506TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 6A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06508TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 8A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06512TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 12A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06516TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 16A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06520KSDSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 20A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06520TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 20A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06530TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 30A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D06560KSDSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 60A, 650V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |