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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
ON SemiconductorUJ3D1250KSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 50A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1250K2Silicon Carbide (SiC) Diode - EliteSiC, TO-247-2L, 50A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1725K2Silicon Carbide (SiC) Diode - EliteSiC, TO-247-2L, 25A, 1700V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
| Silicon carbide sic jfets | 1 | 1 | The UJ3N065025K3S is a 650V, 25 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits... Read More | |
| Silicon carbide sic | 1 | 1 | The UJ3N065080K3S is a 650V, 80 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits... Read More | |
| Silicon carbide sic jfets | 1 | 1 | The UJ3N120035K3S is a 1200V, 35 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits... Read More | |
| Silicon carbide sic | 1 | 1 | The UJ3N120065K3S is a 1200V, 66 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits... Read More | |
| Silicon carbide sic | 1 | 1 | The UJ3N120070K3S is a 1200V, 70 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits... Read More | |
ON SemiconductorUJ4C075018K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 18 mohm, 750V, TO-247-3L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
| Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More | |