| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
ON SemiconductorUJ3D1202TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 2A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1205Silicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 5A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 2 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1205TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 5A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic | 2 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1210Silicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Discrete power modules | 2 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1210K2Silicon Carbide (SiC) Diode - EliteSiC, TO-247-2L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Discrete power modules | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1210KSSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Discrete power modules | 2 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1210KSDSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Dual Diode | Silicon carbide sic diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1210TSSilicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Silicon carbide sic diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1220K2Silicon Carbide (SiC) Diode - EliteSiC, TO-247-2L, 20A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Discrete power modules | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
ON SemiconductorUJ3D1220KSDSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 20A, 1200V SiC Merged PiN-Schottky (MPS) Dual Diode | Discrete power modules | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |