| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
ON SemiconductorUHB100SC12E1BC3NSilicon Carbide (SiC) Cascode JFET Module - EliteSiC, 9.4 mohm, 1200V | Silicon carbide sic cascode jfets | 1 | 1 | The UHB100SC12E1BC3N contains an 9.4 mohm/1200V JFET half bridge in EB1 package. The SiC JFET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the... Read More |
| Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More | |
ON SemiconductorUJ3C065030T3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 27 mohm, 650V, TO-220-3L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
| Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More | |
ON SemiconductorUJ3C065080K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 80 mohm, 650V, TO-247-3L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUJ3C065080T3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 80 mohm, 650V, TO-220-3L | Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUJ3C120040K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 35 mohm, 1200V, TO-247-3L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUJ3C120070K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 70 mohm, 1200V, TO-247-3L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUJ3C120070K4SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 70 mohm, 1200V, TO-247-4L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUJ3C120080K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 80 mohm, 1200V, TO-247-3L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |