| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
ON SemiconductorUF4SC120023K4SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 23 mohm, 1200V, TO-247-4L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4SC120030B7SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 30 mohm, 1200V, D2PAK-7L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4SC120030K4SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 30 mohm, 1200V, TO-247-4L | Silicon carbide sic | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
| Discrete power modules | 1 | 1 | The UFB15C12E1BC3N contains an 70 mohm/1200V JFET full bridge in EB1 package. The SiC JFET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the... Read More | |
| Silicon carbide sic cascode jfets | 1 | 1 | The UFB25SC12E1BC3N contains an 35 mohm/1200V JFET full bridge in EB1 package. The SiC JFET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the... Read More | |
ON SemiconductorUG3SC120009K4SSilicon Carbide (SiC) Combo JFET - EliteSiC, 8.8 mohm, 1200V, TO-247-4L | Discrete power modules | 1 | 1 | The UG3SC120009K4S "Combo-JFET" integrates both a 1200VSiC JFET and a Low Voltage Si MOSFET into a single TO-247-4Lpackage. This innovative approach allows users to create circuitrythat would enable a normally-off switch while leveraging the benefitsof a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and... Read More |
| Discrete power modules | 1 | 1 | The UG4SC075005L8S "Combo-JFET" integrates both a 750V SiCJFET and a Low Voltage Si MOSFET into a single TOLL package. Thisinnovative approach allows users to create circuitry that would enablea normally-off switch while leveraging the benefits of a normally-onSiC JFET. These benefits include ultra-low on-resistance (RDS(on)) tominimize conduction losses and the... Read More | |
ON SemiconductorUG4SC075006K4SSilicon Carbide (SiC) Combo JFET - EliteSiC, 5.3 mohm, 750V, TO-247-4L | Silicon carbide sic combo jfets | 1 | 1 | The UG4SC075006K4S "Combo-JFET" integrates both a 750VSiC JFET and a Low Voltage Si MOSFET into a single TO-247-4Lpackage. This innovative approach allows users to create circuitrythat would enable a normally-off switch while leveraging thebenefits of a normally-on SiC JFET. These benefits include ultra-lowon-resistance (RDS(on)) to minimize conduction losses and theexceptional... Read More |
ON SemiconductorUG4SC075009K4SSilicon Carbide (SiC) Combo JFET - EliteSiC, 8.4 mohm, 750V, TO-247-4L | Silicon carbide sic combo jfets | 1 | 1 | The UG4SC075009K4S "Combo-JFET" integrates both a 750VSiC JFET and a Low Voltage Si MOSFET into a single TO-247-4Lpackage. This innovative approach allows users to create circuitrythat would enable a normally-off switch while leveraging the benefitsof a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and... Read More |
| Silicon carbide sic combo jfets | 1 | 1 | The UG4SC075011K4S "Combo-JFET" integrates both a 750V SiCJFET and a Low Voltage Si MOSFET into a single TO-247-4L package.This innovative approach allows users to create circuitry that wouldenable a normally-off switch while leveraging the benefits of anormally-on SiC JFET. These benefits include ultra-low on-resistance(RDS(on)) to minimize conduction losses and the... Read More | |