| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Semiconductors - Discretes | 4 | 1 | 1.0A Ultra Fast Recovery Rectifier | |
| Discrete Semiconductor Products | 3 | 1 | 1.0A Ultra Fast Recovery Rectifier | |
ON SemiconductorUF4C120053B7SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 53 mohm, 1200V, D2PAK-7L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4C120053K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 53 mohm, 1200V, TO-247-3L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4C120053K4SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 53 mohm, 1200V, TO-247-4L | Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4C120070B7SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 72 mohm, 1200V, D2PAK-7L | Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4C120070K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 72 mohm, 1200V, TO-247-3L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4C120070K4SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 72 mohm, 1200V, TO-247-4L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4SC120009K4SHSilicon Carbide (SiC) Cascode JFET - EliteSiC, 9.1 mohm, 1200V, TO-247-4L | Silicon carbide sic cascode jfets | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |
ON SemiconductorUF4SC120023B7SSilicon Carbide (SiC) Cascode JFET - EliteSiC, 23 mohm, 1200V, D2PAK-7L | Discrete power modules | 1 | 1 | EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying... Read More |