
STGW30M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS
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STGW30M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGW30M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 80 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 258 W |
| Reverse Recovery Time (trr) | 140 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 300 µJ, 960 µJ |
| Td (on/off) @ 25°C | 115 ns |
| Td (on/off) @ 25°C | 31.6 ns |
| Test Condition | 15 V, 400 V, 30 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.23 | |
| 30 | $ 1.77 | |||
| 120 | $ 1.52 | |||
| 510 | $ 1.48 | |||
Description
General part information
STGW30M65DF2 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources