Zenode.ai Logo
Beta
K
STGW30H60DFB - STMICROELECTRONICS STW21N90K5

STGW30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

Deep-Dive with AI

Search across all available documentation for this part.

STGW30H60DFB - STMICROELECTRONICS STW21N90K5

STGW30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW30H60DFB
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge149 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]260 W
Reverse Recovery Time (trr)53 ns
Supplier Device PackageTO-247
Switching Energy [custom]383 µJ
Switching Energy [custom]293 µJ
Td (on/off) @ 25°C37 ns, 146 ns
Test Condition15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.43
30$ 2.72
120$ 2.33
510$ 2.07
1020$ 1.77
2010$ 1.67
5010$ 1.60
NewarkEach 1$ 3.82
10$ 3.81
100$ 2.09
500$ 1.83
1200$ 1.78
3000$ 1.73

Description

General part information

STGW30M65DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.