DMP21D0UFB-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP21D0UFB-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP21D0UFB-7 |
|---|---|
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 76.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-UFDFN |
| Power Dissipation (Max) | 430 mW |
| Rds On (Max) @ Id, Vgs [Max] | 495 mOhm |
| Supplier Device Package | X1-DFN1006-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.11 | |
| 6000 | $ 0.10 | |||
| 9000 | $ 0.09 | |||
| 15000 | $ 0.09 | |||
| 21000 | $ 0.09 | |||
| 30000 | $ 0.08 | |||
| 75000 | $ 0.08 | |||
Description
General part information
DMP21D5UFB4 Series
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources