P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | 1 V | 1.2 V 5 V | P-Channel | 20 V | 970 mOhm | 3-XFDFN | 460 mW | 46.1 pF | Surface Mount | 0.5 nC | MOSFET (Metal Oxide) | 8 V | |||||
Diodes Inc | -55 °C | 150 °C | 1 V | 1.8 V 4.5 V | P-Channel | 20 V | 3-XFDFN | 430 mW | Surface Mount | 1.5 nC | MOSFET (Metal Oxide) | 8 V | 495 mOhm | 76.5 pF | |||||
Diodes Inc | -55 °C | 150 °C | 1 V | 1.2 V 4.5 V | P-Channel | 20 V | 1 Ohm | 3-UDFN | 46.1 pF | Surface Mount | 0.8 nC | MOSFET (Metal Oxide) | 8 V | 600 mA | X1-DFN1212-3 | ||||
Diodes Inc | -55 °C | 150 °C | 1 V | 1.8 V 4.5 V | P-Channel | 20 V | 3-XFDFN | 430 mW | Surface Mount | MOSFET (Metal Oxide) | 8 V | 495 mOhm | 80 pF | 1.54 nC | |||||
Diodes Inc | -55 °C | 150 °C | 1.2 V | 1.5 V 4.5 V | P-Channel | 20 V | 495 mOhm | 3-UDFN | 490 mW | Surface Mount | MOSFET (Metal Oxide) | 8 V | 80 pF | 820 mA | X1-DFN1212-3 | 3 nC | |||
Diodes Inc | -55 °C | 150 °C | 1 V | 1.5 V 4.5 V | P-Channel | 20 V | 1 Ohm | 3-XFDFN | 360 mW | Surface Mount | MOSFET (Metal Oxide) | 8 V | 49 pF | 330 mA | X2-DFN0806-3 | ||||
Diodes Inc | -55 °C | 150 °C | 1 V | 1.8 V 4.5 V | P-Channel | 20 V | 3-UFDFN | 430 mW | Surface Mount | 1.5 nC | MOSFET (Metal Oxide) | 8 V | 495 mOhm | 76.5 pF | X1-DFN1006-3 |