DMP21D0UFB4-7R

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMP21D0UFB4-7R

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP21D0UFB4-7R

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	76.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	430 mW
Rds On (Max) @ Id, Vgs [Max]	495 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

DMP21D5UFB4 Series

P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMP21D5UFB4-7B	-55 °C	150 °C	1 V	1.2 V 5 V	P-Channel	20 V	970 mOhm	3-XFDFN	460 mW	46.1 pF	Surface Mount	0.5 nC	MOSFET (Metal Oxide)	8 V
Diodes Inc DMP21D0UFB4-7R	-55 °C	150 °C	1 V	1.8 V 4.5 V	P-Channel	20 V		3-XFDFN	430 mW		Surface Mount	1.5 nC	MOSFET (Metal Oxide)	8 V	495 mOhm	76.5 pF
Diodes Inc DMP21D6UFD-7	-55 °C	150 °C	1 V	1.2 V 4.5 V	P-Channel	20 V	1 Ohm	3-UDFN		46.1 pF	Surface Mount	0.8 nC	MOSFET (Metal Oxide)	8 V			600 mA	X1-DFN1212-3
Diodes Inc DMP21D0UFB4-7B	-55 °C	150 °C	1 V	1.8 V 4.5 V	P-Channel	20 V		3-XFDFN	430 mW		Surface Mount		MOSFET (Metal Oxide)	8 V	495 mOhm	80 pF			1.54 nC
Diodes Inc DMP21D0UFD-7	-55 °C	150 °C	1.2 V	1.5 V 4.5 V	P-Channel	20 V	495 mOhm	3-UDFN	490 mW		Surface Mount		MOSFET (Metal Oxide)	8 V		80 pF	820 mA	X1-DFN1212-3	3 nC
Diodes Inc DMP21D2UFA-7B	-55 °C	150 °C	1 V	1.5 V 4.5 V	P-Channel	20 V	1 Ohm	3-XFDFN	360 mW		Surface Mount		MOSFET (Metal Oxide)	8 V		49 pF	330 mA	X2-DFN0806-3
Diodes Inc DMP21D0UFB-7	-55 °C	150 °C	1 V	1.8 V 4.5 V	P-Channel	20 V		3-UFDFN	430 mW		Surface Mount	1.5 nC	MOSFET (Metal Oxide)	8 V	495 mOhm	76.5 pF		X1-DFN1006-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DMP21D5UFB4 Series

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMP21D0UFB4-7R

Deep-Dive with AI

DMP21D0UFB4-7R

Deep-Dive with AI

Technical Specifications

DMP21D5UFB4 Series

Pricing

Description

DMP21D5UFB4 Series

Documents

Recommended Soldering Techniques

Datasheet

Package PDF

Datasheet

DMP21D5UFB4 Series