DMP21D5UFB4-7B

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.5A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, ULTRA SMALL, PLASTIC, X2-DFN1006H4-3, 3 PIN

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMP21D5UFB4-7B

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.5A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, ULTRA SMALL, PLASTIC, X2-DFN1006H4-3, 3 PIN

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP21D5UFB4-7B

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	46.1 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	460 mW
Rds On (Max) @ Id, Vgs	970 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

DMP21D5UFB4 Series

P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMP21D5UFB4-7B	-55 °C	150 °C	1 V	1.2 V 5 V	P-Channel	20 V	970 mOhm	3-XFDFN	460 mW	46.1 pF	Surface Mount	0.5 nC	MOSFET (Metal Oxide)	8 V
Diodes Inc DMP21D0UFB4-7R	-55 °C	150 °C	1 V	1.8 V 4.5 V	P-Channel	20 V		3-XFDFN	430 mW		Surface Mount	1.5 nC	MOSFET (Metal Oxide)	8 V	495 mOhm	76.5 pF
Diodes Inc DMP21D6UFD-7	-55 °C	150 °C	1 V	1.2 V 4.5 V	P-Channel	20 V	1 Ohm	3-UDFN		46.1 pF	Surface Mount	0.8 nC	MOSFET (Metal Oxide)	8 V			600 mA	X1-DFN1212-3
Diodes Inc DMP21D0UFB4-7B	-55 °C	150 °C	1 V	1.8 V 4.5 V	P-Channel	20 V		3-XFDFN	430 mW		Surface Mount		MOSFET (Metal Oxide)	8 V	495 mOhm	80 pF			1.54 nC
Diodes Inc DMP21D0UFD-7	-55 °C	150 °C	1.2 V	1.5 V 4.5 V	P-Channel	20 V	495 mOhm	3-UDFN	490 mW		Surface Mount		MOSFET (Metal Oxide)	8 V		80 pF	820 mA	X1-DFN1212-3	3 nC
Diodes Inc DMP21D2UFA-7B	-55 °C	150 °C	1 V	1.5 V 4.5 V	P-Channel	20 V	1 Ohm	3-XFDFN	360 mW		Surface Mount		MOSFET (Metal Oxide)	8 V		49 pF	330 mA	X2-DFN0806-3
Diodes Inc DMP21D0UFB-7	-55 °C	150 °C	1 V	1.8 V 4.5 V	P-Channel	20 V		3-UFDFN	430 mW		Surface Mount	1.5 nC	MOSFET (Metal Oxide)	8 V	495 mOhm	76.5 pF		X1-DFN1006-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.37
		10	$ 0.26
		100	$ 0.13
		500	$ 0.11
		1000	$ 0.08
		2000	$ 0.07
		5000	$ 0.06
	Digi-Reel®	1	$ 0.37
		10	$ 0.26
		100	$ 0.13
		500	$ 0.11
		1000	$ 0.08
		2000	$ 0.07
		5000	$ 0.06
	Tape & Reel (TR)	10000	$ 0.06
		30000	$ 0.05
		50000	$ 0.05
Newark	Each (Supplied on Cut Tape)	1	$ 0.30
		10	$ 0.20
		25	$ 0.17
		50	$ 0.14
		100	$ 0.11
		250	$ 0.10
		500	$ 0.10
		1000	$ 0.09

Description

General part information

DMP21D5UFB4 Series

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Documents

Technical documentation and resources

Datasheet

Recommended Soldering Techniques

Technical Document

Package PDF

Package File