IR2213

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

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Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IR2213

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2.5 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	1200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Driven Configuration	Channel Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Number of Drivers	Mounting Type	Operating Temperature
Infineon Technologies IR2213PBF	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	14-DIP	7.62 mm	0.3 "	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	14-DIP	2	Through Hole
Infineon Technologies IR2213STRPBF			1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	16-SOIC	7.5 mm	0.295 in	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	16-SOIC	2	Surface Mount	125 ¯C
Infineon Technologies IR2213S	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	16-SOIC	7.5 mm	0.295 in	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	16-SOIC	2	Surface Mount
Infineon Technologies IR2213	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	14-DIP	7.62 mm	0.3 "	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	14-DIP	2	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Non-Inverting 14-DIP

Technical documentation and resources