IR2213PBF

LTB

Infineon Technologies

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 12V-20V SUPPLY, 2.5A PEAK OUT, DIP-14

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DocumentsDatasheet Application Note EN

IR2213PBF

LTB

Infineon Technologies

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 12V-20V SUPPLY, 2.5A PEAK OUT, DIP-14

Deep-Dive with AI

DocumentsDatasheet Application Note EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2213PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2.5 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	1200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

IR2213 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Driven Configuration	Channel Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Number of Drivers	Mounting Type	Operating Temperature
Infineon Technologies IR2213PBF	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	14-DIP	7.62 mm	0.3 "	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	14-DIP	2	Through Hole
Infineon Technologies IR2213STRPBF			1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	16-SOIC	7.5 mm	0.295 in	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	16-SOIC	2	Surface Mount	125 ¯C
Infineon Technologies IR2213S	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	16-SOIC	7.5 mm	0.295 in	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	16-SOIC	2	Surface Mount
Infineon Technologies IR2213	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	14-DIP	7.62 mm	0.3 "	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	14-DIP	2	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 4.10
Digikey	Tube	1	$ 7.76
		10	$ 7.01
		25	$ 6.69
		100	$ 5.81
		250	$ 5.54
		500	$ 5.06
		1000	$ 4.40
Newark	Each	1	$ 9.10
		10	$ 7.00
		25	$ 6.60
		50	$ 6.19
		100	$ 5.77
		250	$ 5.48
		500	$ 5.05

Description

General part information

IR2213 Series

The IR2213PBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 1200V.