MOSFET DRIVER DUAL, LOW & HIGH SIDE, 12V-20V SUPPLY, 2.5A PEAK OUT, DIP-14
| Part | Operating Temperature [Min] | Operating Temperature [Max] | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Logic Voltage - VIL, VIH [Max] | Logic Voltage - VIL, VIH [Min] | Driven Configuration | Channel Type | Package / Case | Package / Case [y] | Package / Case [x] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Number of Drivers | Mounting Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | 1200 V | Non-Inverting | 12 V | 20 V | 9.5 V | 6 V | Half-Bridge | Independent | 14-DIP | 7.62 mm | 0.3 " | 2 A | 2.5 A | IGBT N-Channel MOSFET | 25 ns | 17 ns | 14-DIP | 2 | Through Hole | |
Infineon Technologies | 1200 V | Non-Inverting | 12 V | 20 V | 9.5 V | 6 V | Half-Bridge | Independent | 16-SOIC | 7.5 mm | 0.295 in | 2 A | 2.5 A | IGBT N-Channel MOSFET | 25 ns | 17 ns | 16-SOIC | 2 | Surface Mount | 125 ¯C | ||
Infineon Technologies | -55 °C | 150 °C | 1200 V | Non-Inverting | 12 V | 20 V | 9.5 V | 6 V | Half-Bridge | Independent | 16-SOIC | 7.5 mm | 0.295 in | 2 A | 2.5 A | IGBT N-Channel MOSFET | 25 ns | 17 ns | 16-SOIC | 2 | Surface Mount | |
Infineon Technologies | -55 °C | 150 °C | 1200 V | Non-Inverting | 12 V | 20 V | 9.5 V | 6 V | Half-Bridge | Independent | 14-DIP | 7.62 mm | 0.3 " | 2 A | 2.5 A | IGBT N-Channel MOSFET | 25 ns | 17 ns | 14-DIP | 2 | Through Hole |