IR2213STRPBF

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Infineon Technologies

THE IR2213S IS A 1200 V HIGH- AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (DSO-16 LEAD, WIDE-BODY PACKAGE)

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IR2213STRPBF

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Infineon Technologies

THE IR2213S IS A 1200 V HIGH- AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (DSO-16 LEAD, WIDE-BODY PACKAGE)

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2213STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2.5 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	1200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature	125 ¯C
Package / Case	16-SOIC
Package / Case [x]	0.295 in
Package / Case [y]	7.5 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	16-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

IR2213 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Driven Configuration	Channel Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Number of Drivers	Mounting Type	Operating Temperature
Infineon Technologies IR2213PBF	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	14-DIP	7.62 mm	0.3 "	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	14-DIP	2	Through Hole
Infineon Technologies IR2213STRPBF			1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	16-SOIC	7.5 mm	0.295 in	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	16-SOIC	2	Surface Mount	125 ¯C
Infineon Technologies IR2213S	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	16-SOIC	7.5 mm	0.295 in	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	16-SOIC	2	Surface Mount
Infineon Technologies IR2213	-55 °C	150 °C	1200 V	Non-Inverting	12 V	20 V	9.5 V	6 V	Half-Bridge	Independent	14-DIP	7.62 mm	0.3 "	2 A	2.5 A	IGBT N-Channel MOSFET	25 ns	17 ns	14-DIP	2	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 6.04
		10	$ 4.64
		50	$ 4.29
		100	$ 3.91
		200	$ 3.83
Digikey	Cut Tape (CT)	1	$ 6.37
		10	$ 5.75
		25	$ 5.48
		100	$ 4.76
		250	$ 4.55
		500	$ 4.15
	Digi-Reel®	1	$ 6.37
		10	$ 5.75
		25	$ 5.48
		100	$ 4.76
		250	$ 4.55
		500	$ 4.15
	Tape & Reel (TR)	1000	$ 3.61
		2000	$ 3.48

Description

General part information

IR2213 Series

EiceDRIVER™ 1200 V high- and low-sidegate driver ICwith typical 2.0 A source and 2.5 A sink currents in DSO-16 lead, wide-body package forIGBT discretesandIGBT modules. IR2213S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such under voltage lockout protection, shutdown, and separate logic and power ground. The IR2213S three-phase gate driver is well suited for low- and medium- power designs up to 10 kW or higher power levels with additional external buffer current driver. IR2213S provides high performance drive capability with protective features for a cost-competitive solution. IR2213S belongs to the1200 V level-shift junction isolated (JI)gate driver family.

Documents

Technical documentation and resources