DMN2005UFG-7
ActiveDiodes Inc
POWER MOSFET, N CHANNEL, 20 V, 50 A, 0.004 OHM, POWERDI 3333, SURFACE MOUNT
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DMN2005UFG-7
ActiveDiodes Inc
POWER MOSFET, N CHANNEL, 20 V, 50 A, 0.004 OHM, POWERDI 3333, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2005UFG-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 164 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6495 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.2 V |
DMN2005DLP4K Series
20V N-Channel Enhancement Mode MOSFET
| Part | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Grade | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Qualification | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Technology | Configuration | Power - Max [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | Automotive | 6495 pF | 1.2 V | 18 A 50 A | AEC-Q101 | 8-PowerVDFN | Surface Mount | 4.6 mOhm | POWERDI3333-8 | 164 nC | 12 V | MOSFET (Metal Oxide) | |||||||
Diodes Inc | 20 V | -65 °C | 150 °C | 900 mV | 300 mA | 6-XFDFN Exposed Pad | Surface Mount | 1.5 Ohm | X2-DFN1310-6 (Type B) | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 400 mW | ||||||||||||
Diodes Inc | N-Channel | 20 V | -65 °C | 150 °C | 440 mA | 3-UFDFN | Surface Mount | 1.5 Ohm | X1-DFN1006-3 | 10 V | MOSFET (Metal Oxide) | 4 V | 1.5 V | 1.2 V | 450 mW | |||||||||
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | 5337 pF | 1.2 V | 20 A 100 A | 8-PowerTDFN | Surface Mount | 4.6 mOhm | PowerDI5060-8 | 12 V | MOSFET (Metal Oxide) | 1.5 W | 142 nC | ||||||||
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | 6495 pF | 1.2 V | 18.1 A | 8-PowerVDFN | Surface Mount | 4.6 mOhm | POWERDI3333-8 | 164 nC | 12 V | MOSFET (Metal Oxide) | |||||||||
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | Automotive | 6495 pF | 1.2 V | 18 A 50 A | AEC-Q101 | 8-PowerVDFN | Surface Mount | 4.6 mOhm | POWERDI3333-8 | 164 nC | 12 V | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.56 | |
| 10 | $ 0.48 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.28 | |||
| 1000 | $ 0.24 | |||
| Digi-Reel® | 1 | $ 0.56 | ||
| 10 | $ 0.48 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.28 | |||
| 1000 | $ 0.24 | |||
| Tape & Reel (TR) | 2000 | $ 0.19 | ||
Description
General part information
DMN2005DLP4K Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources