20V N-Channel Enhancement Mode MOSFET
20V N-Channel Enhancement Mode MOSFET
| Part | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Grade | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Qualification | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Technology | Configuration | Power - Max [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | Automotive | 6495 pF | 1.2 V | 18 A 50 A | AEC-Q101 | 8-PowerVDFN | Surface Mount | 4.6 mOhm | POWERDI3333-8 | 164 nC | 12 V | MOSFET (Metal Oxide) | |||||||
Diodes Inc | 20 V | -65 °C | 150 °C | 900 mV | 300 mA | 6-XFDFN Exposed Pad | Surface Mount | 1.5 Ohm | X2-DFN1310-6 (Type B) | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 400 mW | ||||||||||||
Diodes Inc | N-Channel | 20 V | -65 °C | 150 °C | 440 mA | 3-UFDFN | Surface Mount | 1.5 Ohm | X1-DFN1006-3 | 10 V | MOSFET (Metal Oxide) | 4 V | 1.5 V | 1.2 V | 450 mW | |||||||||
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | 5337 pF | 1.2 V | 20 A 100 A | 8-PowerTDFN | Surface Mount | 4.6 mOhm | PowerDI5060-8 | 12 V | MOSFET (Metal Oxide) | 1.5 W | 142 nC | ||||||||
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | 6495 pF | 1.2 V | 18.1 A | 8-PowerVDFN | Surface Mount | 4.6 mOhm | POWERDI3333-8 | 164 nC | 12 V | MOSFET (Metal Oxide) | |||||||||
Diodes Inc | N-Channel | 20 V | -55 °C | 150 °C | 2.5 V 4.5 V | Automotive | 6495 pF | 1.2 V | 18 A 50 A | AEC-Q101 | 8-PowerVDFN | Surface Mount | 4.6 mOhm | POWERDI3333-8 | 164 nC | 12 V | MOSFET (Metal Oxide) |