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DMN2005UFGQ-7

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Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for PowerDI3333-8

DMN2005UFGQ-7

Active
Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMN2005UFGQ-7

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2005UFGQ-7
Current - Continuous Drain (Id) (Ta)18 A
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)164 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)6495 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package NamePOWERDI3333-8
Power Dissipation (Max)1.05 W
QualificationAEC-Q101
Rds On (Max)4.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.2 V

Pricing

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CAD

3D models and CAD resources for this part