DMN2005UFGQ-7

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Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2005UFGQ-7

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Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Technical Specifications

Parameters and characteristics for this part

Specification	DMN2005UFGQ-7

Current - Continuous Drain (Id) @ 25°C	18 A, 50 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	164 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6495 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

DMN2005DLP4K Series

20V N-Channel Enhancement Mode MOSFET

Part	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Qualification	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Configuration	Power - Max [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN2005UFGQ-7	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V	Automotive	6495 pF	1.2 V	18 A 50 A	AEC-Q101	8-PowerVDFN	Surface Mount	4.6 mOhm	POWERDI3333-8	164 nC	12 V	MOSFET (Metal Oxide)
Diodes Inc DMN2005DLP4K-7		20 V	-65 °C	150 °C				900 mV	300 mA		6-XFDFN Exposed Pad	Surface Mount	1.5 Ohm	X2-DFN1310-6 (Type B)			MOSFET (Metal Oxide)	2 N-Channel (Dual)	400 mW
Diodes Inc DMN2005LPK-7	N-Channel	20 V	-65 °C	150 °C					440 mA		3-UFDFN	Surface Mount	1.5 Ohm	X1-DFN1006-3		10 V	MOSFET (Metal Oxide)			4 V	1.5 V	1.2 V	450 mW
Diodes Inc DMN2005UPS-13	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V		5337 pF	1.2 V	20 A 100 A		8-PowerTDFN	Surface Mount	4.6 mOhm	PowerDI5060-8		12 V	MOSFET (Metal Oxide)						1.5 W	142 nC
Diodes Inc DMN2005UFG-7	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V		6495 pF	1.2 V	18.1 A		8-PowerVDFN	Surface Mount	4.6 mOhm	POWERDI3333-8	164 nC	12 V	MOSFET (Metal Oxide)
Diodes Inc DMN2005UFGQ-13	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V	Automotive	6495 pF	1.2 V	18 A 50 A	AEC-Q101	8-PowerVDFN	Surface Mount	4.6 mOhm	POWERDI3333-8	164 nC	12 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 0.40
		4000	$ 0.37
		6000	$ 0.36
		10000	$ 0.35

Description

General part information

DMN2005DLP4K Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DMN2005UFGQ-7

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DMN2005UFGQ-7

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Technical Specifications

DMN2005DLP4K Series

Pricing

Description

DMN2005DLP4K Series

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Datasheet

Datasheet

DMN2005DLP4K Series