DMN2005DLP4K-7

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Diodes Inc

MOSFET, DUAL, N-CH, 20V, 0.3A ROHS COMPLIANT: YES

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DMN2005DLP4K-7

Active

Diodes Inc

MOSFET, DUAL, N-CH, 20V, 0.3A ROHS COMPLIANT: YES

Deep-Dive with AI

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2005DLP4K-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	20 V
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	400 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	X2-DFN1310-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

DMN2005DLP4K Series

20V N-Channel Enhancement Mode MOSFET

Part	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Qualification	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Configuration	Power - Max [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN2005UFGQ-7	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V	Automotive	6495 pF	1.2 V	18 A 50 A	AEC-Q101	8-PowerVDFN	Surface Mount	4.6 mOhm	POWERDI3333-8	164 nC	12 V	MOSFET (Metal Oxide)
Diodes Inc DMN2005DLP4K-7		20 V	-65 °C	150 °C				900 mV	300 mA		6-XFDFN Exposed Pad	Surface Mount	1.5 Ohm	X2-DFN1310-6 (Type B)			MOSFET (Metal Oxide)	2 N-Channel (Dual)	400 mW
Diodes Inc DMN2005LPK-7	N-Channel	20 V	-65 °C	150 °C					440 mA		3-UFDFN	Surface Mount	1.5 Ohm	X1-DFN1006-3		10 V	MOSFET (Metal Oxide)			4 V	1.5 V	1.2 V	450 mW
Diodes Inc DMN2005UPS-13	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V		5337 pF	1.2 V	20 A 100 A		8-PowerTDFN	Surface Mount	4.6 mOhm	PowerDI5060-8		12 V	MOSFET (Metal Oxide)						1.5 W	142 nC
Diodes Inc DMN2005UFG-7	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V		6495 pF	1.2 V	18.1 A		8-PowerVDFN	Surface Mount	4.6 mOhm	POWERDI3333-8	164 nC	12 V	MOSFET (Metal Oxide)
Diodes Inc DMN2005UFGQ-13	N-Channel	20 V	-55 °C	150 °C	2.5 V 4.5 V	Automotive	6495 pF	1.2 V	18 A 50 A	AEC-Q101	8-PowerVDFN	Surface Mount	4.6 mOhm	POWERDI3333-8	164 nC	12 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.48
		10	$ 0.37
		100	$ 0.22
		500	$ 0.21
		1000	$ 0.14
	Digi-Reel®	1	$ 0.48
		10	$ 0.37
		100	$ 0.22
		500	$ 0.21
		1000	$ 0.14
	Tape & Reel (TR)	3000	$ 0.13
		6000	$ 0.12
		9000	$ 0.11
		30000	$ 0.11
		75000	$ 0.10
Newark	Each (Supplied on Cut Tape)	1	$ 0.55
		10	$ 0.39
		25	$ 0.34
		50	$ 0.29
		100	$ 0.24
		250	$ 0.23
		500	$ 0.23
		1000	$ 0.22

Description

General part information

DMN2005DLP4K Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Documents

Technical documentation and resources

Datasheet

Recommended Soldering Techniques

Technical Document

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