IRF540NPBF

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Infineon Technologies

POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-220AB, THROUGH HOLE

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IRF540NPBF

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Infineon Technologies

POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-220AB, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF540NPBF

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	44 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF540 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	FET Type	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Infineon Technologies IRF540ZPBF	-55 °C	175 ░C	100 V	4 V	92 W	20 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-220AB	26.5 mOhm	1770 pF	10 V	63 nC	36 A
Infineon Technologies IRF540ZLPBF	-55 °C	175 ░C	100 V	4 V	92 W	20 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-262	26.5 mOhm	1770 pF	10 V	63 nC	36 A
Infineon Technologies IRF540NSTRRPBF	-55 °C	175 ░C	100 V	4 V		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	Surface Mount	D2PAK	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W
Infineon Technologies IRF540NSTRLPBF	-55 °C	175 ░C	100 V	4 V		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	Surface Mount	D2PAK	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W
Infineon Technologies IRF540NPBF	-55 °C	175 ░C	100 V	4 V		20 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-220AB	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.30
		10	$ 0.82
		100	$ 0.55
		500	$ 0.47

Description

General part information

IRF540 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

IRF540NPBF

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IRF540NPBF

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Technical Specifications

IRF540 Series

Pricing

Description

IRF540 Series

Documents

Application Note EN

Datasheet

IR Part Numbering System

IRF540 Series