POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Vgs (Max) | Package / Case | FET Type | Technology | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 100 V | 4 V | 92 W | 20 V | TO-220-3 | N-Channel | MOSFET (Metal Oxide) | Through Hole | TO-220AB | 26.5 mOhm | 1770 pF | 10 V | 63 nC | 36 A | |
Infineon Technologies | -55 °C | 175 ░C | 100 V | 4 V | 92 W | 20 V | I2PAK TO-262-3 Long Leads TO-262AA | N-Channel | MOSFET (Metal Oxide) | Through Hole | TO-262 | 26.5 mOhm | 1770 pF | 10 V | 63 nC | 36 A | |
Infineon Technologies | -55 °C | 175 ░C | 100 V | 4 V | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | MOSFET (Metal Oxide) | Surface Mount | D2PAK | 44 mOhm | 1960 pF | 10 V | 71 nC | 33 A | 130 W | |
Infineon Technologies | -55 °C | 175 ░C | 100 V | 4 V | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | MOSFET (Metal Oxide) | Surface Mount | D2PAK | 44 mOhm | 1960 pF | 10 V | 71 nC | 33 A | 130 W | |
Infineon Technologies | -55 °C | 175 ░C | 100 V | 4 V | 20 V | TO-220-3 | N-Channel | MOSFET (Metal Oxide) | Through Hole | TO-220AB | 44 mOhm | 1960 pF | 10 V | 71 nC | 33 A | 130 W |