IRF540NSTRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IRF540NSTRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF540NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	44 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF540 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	FET Type	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Infineon Technologies IRF540ZPBF	-55 °C	175 ░C	100 V	4 V	92 W	20 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-220AB	26.5 mOhm	1770 pF	10 V	63 nC	36 A
Infineon Technologies IRF540ZLPBF	-55 °C	175 ░C	100 V	4 V	92 W	20 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-262	26.5 mOhm	1770 pF	10 V	63 nC	36 A
Infineon Technologies IRF540NSTRRPBF	-55 °C	175 ░C	100 V	4 V		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	Surface Mount	D2PAK	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W
Infineon Technologies IRF540NSTRLPBF	-55 °C	175 ░C	100 V	4 V		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	Surface Mount	D2PAK	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W
Infineon Technologies IRF540NPBF	-55 °C	175 ░C	100 V	4 V		20 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-220AB	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.05
		10	$ 1.31
		100	$ 0.89
	Digi-Reel®	1	$ 2.05
		10	$ 1.31
		100	$ 0.89
	Tape & Reel (TR)	800	$ 0.67
		1600	$ 0.62
		2400	$ 0.59
		4000	$ 0.56

Description

General part information

IRF540 Series

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

Documents

Technical documentation and resources