IRF540ZPBF

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Infineon Technologies

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE

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IRF540ZPBF

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Infineon Technologies

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF540ZPBF

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	26.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF540 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	FET Type	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Infineon Technologies IRF540ZPBF	-55 °C	175 ░C	100 V	4 V	92 W	20 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-220AB	26.5 mOhm	1770 pF	10 V	63 nC	36 A
Infineon Technologies IRF540ZLPBF	-55 °C	175 ░C	100 V	4 V	92 W	20 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-262	26.5 mOhm	1770 pF	10 V	63 nC	36 A
Infineon Technologies IRF540NSTRRPBF	-55 °C	175 ░C	100 V	4 V		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	Surface Mount	D2PAK	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W
Infineon Technologies IRF540NSTRLPBF	-55 °C	175 ░C	100 V	4 V		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	Surface Mount	D2PAK	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W
Infineon Technologies IRF540NPBF	-55 °C	175 ░C	100 V	4 V		20 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-220AB	44 mOhm	1960 pF	10 V	71 nC	33 A	130 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.77
		10	$ 1.13
		100	$ 0.76
		500	$ 0.60
		1000	$ 0.55
		2000	$ 0.50
		5000	$ 0.46

Description

General part information

IRF540 Series

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.

Documents

Technical documentation and resources