IPW60R125C6FKSA1

NRND

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

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IPW60R125C6FKSA1

NRND

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R125C6FKSA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Input Capacitance (Ciss) (Max) @ Vds	2127 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	219 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPW60R125 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Infineon Technologies IPW60R125CPFKSA1	10 V	125 mOhm	3.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	25 A	PG-TO247-3-1	70 nC	-55 °C	150 °C	N-Channel	600 V	2500 pF	208 W
Infineon Technologies IPW60R125CFD7XKSA1	10 V		4.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	18 A	PG-TO247-3		-55 °C	150 °C	N-Channel	600 V			1503 pF	125 mOhm	36 nC	92 W
Infineon Technologies IPW60R125P6XKSA1	10 V	125 mOhm	4.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 A	PG-TO247-3		-55 °C	150 °C	N-Channel	600 V		219 W	2660 pF		56 nC
Infineon Technologies IPW60R125C6FKSA1	10 V	125 mOhm	3.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 A	PG-TO247-3-1	96 nC	-55 °C	150 °C	N-Channel	600 V		219 W	2127 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.91
		30	$ 4.68
		120	$ 4.01
		510	$ 3.57
		1020	$ 3.05
		2010	$ 2.88
Newark	Each	1	$ 5.21
		10	$ 4.77
		25	$ 3.44
		50	$ 3.16
		100	$ 2.87
		480	$ 2.86
		720	$ 2.43

Description

General part information

IPW60R125 Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources