IPW60R125CPFKSA1

NRND

Infineon Technologies

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

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DocumentsApplication Note EN

IPW60R125CPFKSA1

NRND

Infineon Technologies

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

Deep-Dive with AI

DocumentsApplication Note EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R125CPFKSA1

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPW60R125 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Infineon Technologies IPW60R125CPFKSA1	10 V	125 mOhm	3.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	25 A	PG-TO247-3-1	70 nC	-55 °C	150 °C	N-Channel	600 V	2500 pF	208 W
Infineon Technologies IPW60R125CFD7XKSA1	10 V		4.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	18 A	PG-TO247-3		-55 °C	150 °C	N-Channel	600 V			1503 pF	125 mOhm	36 nC	92 W
Infineon Technologies IPW60R125P6XKSA1	10 V	125 mOhm	4.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 A	PG-TO247-3		-55 °C	150 °C	N-Channel	600 V		219 W	2660 pF		56 nC
Infineon Technologies IPW60R125C6FKSA1	10 V	125 mOhm	3.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 A	PG-TO247-3-1	96 nC	-55 °C	150 °C	N-Channel	600 V		219 W	2127 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	240	$ 3.56
Newark	Each	1	$ 6.32
		10	$ 5.31
		25	$ 4.97
		50	$ 4.64
		100	$ 4.30
		480	$ 4.28
		720	$ 3.81

Description

General part information

IPW60R125 Series

The IPW60R125CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.

Documents

Technical documentation and resources

Application Note EN

Datasheet