IPW60R125CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM; FAST RECOVERY DIODE
Deep-Dive with AI
Search across all available documentation for this part.
IPW60R125CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM; FAST RECOVERY DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW60R125CFD7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1503 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 92 W |
| Rds On (Max) @ Id, Vgs [Max] | 125 mOhm |
| Supplier Device Package | PG-TO247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
IPW60R125 Series
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 125 mOhm | 3.5 V | 20 V | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | 25 A | PG-TO247-3-1 | 70 nC | -55 °C | 150 °C | N-Channel | 600 V | 2500 pF | 208 W | ||||
Infineon Technologies | 10 V | 4.5 V | 20 V | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | 18 A | PG-TO247-3 | -55 °C | 150 °C | N-Channel | 600 V | 1503 pF | 125 mOhm | 36 nC | 92 W | ||||
Infineon Technologies | 10 V | 125 mOhm | 4.5 V | 20 V | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | 30 A | PG-TO247-3 | -55 °C | 150 °C | N-Channel | 600 V | 219 W | 2660 pF | 56 nC | ||||
Infineon Technologies | 10 V | 125 mOhm | 3.5 V | 20 V | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | 30 A | PG-TO247-3-1 | 96 nC | -55 °C | 150 °C | N-Channel | 600 V | 219 W | 2127 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPW60R125 Series
The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Documents
Technical documentation and resources