IPW60R125 Series

Catalog

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Infineon Technologies IPW60R125CPFKSA1	10 V	125 mOhm	3.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	25 A	PG-TO247-3-1	70 nC	-55 °C	150 °C	N-Channel	600 V	2500 pF	208 W
Infineon Technologies IPW60R125CFD7XKSA1	10 V		4.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	18 A	PG-TO247-3		-55 °C	150 °C	N-Channel	600 V			1503 pF	125 mOhm	36 nC	92 W
Infineon Technologies IPW60R125P6XKSA1	10 V	125 mOhm	4.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 A	PG-TO247-3		-55 °C	150 °C	N-Channel	600 V		219 W	2660 pF		56 nC
Infineon Technologies IPW60R125C6FKSA1	10 V	125 mOhm	3.5 V	20 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	30 A	PG-TO247-3-1	96 nC	-55 °C	150 °C	N-Channel	600 V		219 W	2127 pF