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STF10N95K5 - INFINEON SPA11N80C3XKSA2

STF10N95K5

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STMicroelectronics

N-CHANNEL 950 V, 0.65 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN TO-220FP PACKAGE

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STF10N95K5 - INFINEON SPA11N80C3XKSA2

STF10N95K5

Active
STMicroelectronics

N-CHANNEL 950 V, 0.65 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF10N95K5
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds630 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

STF10N105K5 Series

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package

PartInput Capacitance (Ciss) (Max) @ VdsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CVgs (Max) [Max]FET TypeDrive Voltage (Max Rds On, Min Rds On)Mounting TypeSupplier Device PackagePackage / CaseGate Charge (Qg) (Max) @ VgsOperating Temperature [Min]Operating Temperature [Max]TechnologyVgs (Max)Drain to Source Voltage (Vdss)Power Dissipation (Max)Rds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]Rds On (Max) @ Id, Vgs [Max]Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics
545 pF
5 V
6 A
30 V
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
21.5 nC
-55 °C
150 °C
MOSFET (Metal Oxide)
STMicroelectronics
540 pF
4 V
8 A
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
19 nC
-55 °C
150 °C
MOSFET (Metal Oxide)
25 V
600 V
25 W
STMicroelectronics
4 V
7.5 A
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
13.5 nC
-55 °C
150 °C
MOSFET (Metal Oxide)
25 V
600 V
25 W
600 mOhm
400 pF
STMicroelectronics
4.5 V
10 A
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
42 nC
-55 °C
150 °C
MOSFET (Metal Oxide)
30 V
650 V
1 Ohm
35 W
STMicroelectronics
5 V
8 A
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
-55 °C
150 °C
MOSFET (Metal Oxide)
25 V
600 V
25 W
530 mOhm
STMicroelectronics
540 pF
4 V
10 A
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
19 nC
-55 °C
150 °C
MOSFET (Metal Oxide)
25 V
600 V
25 W
STMicroelectronics
630 pF
5 V
8 A
N-Channel
10 V
Through Hole
TO-220FP
TO-220-3 Full Pack
-55 °C
150 °C
MOSFET (Metal Oxide)
30 V
950 V
800 mOhm
22 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.88
50$ 1.49
100$ 1.28
500$ 1.25
NewarkEach 1$ 3.32
10$ 2.21
25$ 2.11
50$ 2.04
100$ 1.96

Description

General part information

STF10N105K5 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.