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STF10NM60ND - TO-220-F

STF10NM60ND

Obsolete
STMicroelectronics

MOSFET N-CH 600V 8A TO220FP

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STF10NM60ND - TO-220-F

STF10NM60ND

Obsolete
STMicroelectronics

MOSFET N-CH 600V 8A TO220FP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF10NM60ND
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds540 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)25 W
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 1.83
100$ 1.51
250$ 1.47
500$ 1.27
1250$ 1.08
2500$ 1.03
5000$ 0.99

Description

General part information

STF10N105K5 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.

Documents

Technical documentation and resources