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STF10N105K5 - STMICROELECTRONICS STF13N60DM2

STF10N105K5

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STMicroelectronics

N-CHANNEL 1050 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFETS IN TO-220FP PACKAGE

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DocumentsDatasheet+15
STF10N105K5 - STMICROELECTRONICS STF13N60DM2

STF10N105K5

Active
STMicroelectronics

N-CHANNEL 1050 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFETS IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF10N105K5
Current - Continuous Drain (Id) @ 25°C6 A
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.5 nC
Input Capacitance (Ciss) (Max) @ Vds545 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.34
50$ 2.65
100$ 2.27
500$ 2.02
1000$ 1.73
2000$ 1.63
5000$ 1.56
NewarkEach 1$ 4.45
10$ 3.54
25$ 2.62
50$ 2.55
100$ 2.48
250$ 2.30
500$ 2.11

Description

General part information

STF10N105K5 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.