Technical Specifications
Parameters and characteristics for this part
| Specification | STF10N105K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF10N105K5 Series
These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
Documents
Technical documentation and resources
Datasheet
DatasheetFlyers (5 of 6)
AN2842
Application NotesAN4337
Application NotesFlyers (5 of 6)
UM1575
User ManualsTN1224
Technical Notes & ArticlesTN1225
Technical Notes & ArticlesFlyers (5 of 6)
Flyers (5 of 6)
TN1378
Technical Notes & ArticlesFlyers (5 of 6)
TN1156
Technical Notes & ArticlesFlyers (5 of 6)
