STF10N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.55 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

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DocumentsDatasheet AN2842 +24

STF10N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.55 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

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DocumentsDatasheet AN2842 +24

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Technical Specifications

Parameters and characteristics for this part

Specification	STF10N60M2

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF10N105K5 Series

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STF10N105K5	545 pF	5 V	6 A	30 V	N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	21.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)
STMicroelectronics STF10NM60ND	540 pF	4 V	8 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	19 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W
STMicroelectronics STF10N60M2		4 V	7.5 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	13.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W	600 mOhm	400 pF
STMicroelectronics STF10N65K3		4.5 V	10 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	42 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	650 V		1 Ohm		35 W
STMicroelectronics STF10N60DM2		5 V	8 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack		-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W				530 mOhm
STMicroelectronics STF10NM60N	540 pF	4 V	10 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	19 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W
STMicroelectronics STF10N95K5	630 pF	5 V	8 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack		-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	950 V		800 mOhm				22 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.45
		50	$ 1.17
		100	$ 0.93
		500	$ 0.78
		1000	$ 0.64
		2000	$ 0.60
		5000	$ 0.57
		10000	$ 0.55

Description

General part information

STF10N105K5 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.

STF10N60M2

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STF10N60M2

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Technical Specifications

STF10N105K5 Series

Pricing

Description

STF10N105K5 Series

Documents

Datasheet

AN2842

TN1378

UM1575

AN4406

AN4250

TN1156

AN4829

AN4337

AN4720

AN4742

TN1224

TN1225

AN5318

AN2344

DS9705

STF10N105K5 Series