Technical Specifications
Parameters and characteristics for this part
| Specification | M93C46-RDW3TP/K |
|---|---|
| Clock Frequency | 2 MHz |
| Grade | Automotive |
| Memory Format | EEPROM |
| Memory Interface | Microwire |
| Memory Organization [custom] | 64, 128 |
| Memory Size | 128 B |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-TSSOP |
| Package / Case [custom] | 0.173 " |
| Package / Case [custom] | 4.4 mm |
| Qualification | AEC-Q100 |
| Supplier Device Package | 8-TSSOP |
| Technology | EEPROM |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 1.8 V |
| Write Cycle Time - Word, Page | 5 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
M93C46-A125 Series
The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b).
The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C.
Documents
Technical documentation and resources