M93C46-A125 Series

1 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM

Catalog

1 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM

Part	Mounting Type	Memory Format	Write Cycle Time - Word, Page	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Package / Case	Package / Case [y]	Package / Case [x]	Memory Interface	Supplier Device Package	Technology	Clock Frequency	Memory Organization [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [custom]	Package / Case [custom]	Qualification	Grade	Package / Case	Package / Case
STMicroelectronics M93C46-WMN6T	Surface Mount	EEPROM	5 ms	Non-Volatile	85 °C	-40 °C	128 B	8-SOIC	3.9 mm	0.154 in	Microwire	8-SOIC	EEPROM	2 MHz	64 128	2.5 V	5.5 V
STMicroelectronics M93C46-RDW3TP/K	Surface Mount	EEPROM	5 ms	Non-Volatile	125 °C	-40 °C	128 B	8-TSSOP			Microwire	8-TSSOP	EEPROM	2 MHz	64 128	1.8 V	5.5 V	0.173 "	4.4 mm	AEC-Q100	Automotive
STMicroelectronics M93C46-MN6	Surface Mount	EEPROM	5 ms	Non-Volatile	85 °C	-40 °C	128 B	8-SOIC	3.9 mm	0.154 in	Microwire	8-SOIC	EEPROM	2 MHz	64 128	4.5 V	5.5 V
STMicroelectronics M93C46-BN6	Through Hole	EEPROM	5 ms	Non-Volatile	85 °C	-40 °C	128 B	8-DIP			Microwire	8-PDIP	EEPROM	2 MHz	64 128	4.5 V	5.5 V					0.3 in	7.62 mm
STMicroelectronics M93C46-RMN3TP/K	Surface Mount	EEPROM	5 ms	Non-Volatile	125 °C	-40 °C	128 B	8-SOIC	3.9 mm	0.154 in	Microwire	8-SOIC	EEPROM	2 MHz	64 128	1.8 V	5.5 V			AEC-Q100	Automotive
STMicroelectronics M93C46-WDW6TP	Surface Mount	EEPROM	5 ms	Non-Volatile	85 °C	-40 °C	128 B	8-TSSOP			Microwire	8-TSSOP	EEPROM	2 MHz	64 128	2.5 V	5.5 V	0.173 "	4.4 mm
STMicroelectronics M93C46-WBN6P	Through Hole	EEPROM	5 ms	Non-Volatile	85 °C	-40 °C	128 B	8-DIP			Microwire	8-PDIP	EEPROM	2 MHz	64 128	2.5 V	5.5 V					0.3 in	7.62 mm

Catalog

1 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM

Key Features

- Industry standard MICROWIRE™ bus

- Single supply voltage:2.5 V to 5.5 V for M93Cx6-W1.8 V to 5.5 V for M93Cx6-R

- Dual organization: by word (x16) or byte (x8)

- Programming instructions that work on: byte, word or entire memory

- Self-timed programming cycle with auto-erase: 5 ms

- READY/BUSY signal during programming

- 2 MHz clock rate

- Sequential read operation

- Enhanced ESD/latch-up behavior

- More than 4 million write cycles

- More than 200-year data retention

• Package

- ECOPACK2 (RoHS compliant) and halogen-free packages:DFN8SO8NTSSOP8

Description

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C.