M93C46-RMN3TP/K

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STMicroelectronics

EEPROM SERIAL-MICROWIRE 1K-BIT 128 X 8/64 X 16 2.5V/3.3V/5V 8-PIN SOIC T/R

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M93C46-RMN3TP/K

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STMicroelectronics

EEPROM SERIAL-MICROWIRE 1K-BIT 128 X 8/64 X 16 2.5V/3.3V/5V 8-PIN SOIC T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

M93C46 Series

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b).

The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C.

Technical Specifications

Parameters and characteristics for this part

Specification	M93C46-RMN3TP/K

Clock Frequency	2 MHz
Grade	Automotive
Memory Depth (Option 1)	128
Memory Depth (Option 2)	64
Memory Format	EEPROM
Memory Interface (Type)	Microwire
Memory Organization	128 x 8, 64 x 16
Memory Size	1 Kbit
Memory Type	Non-Volatile
Memory Width (Option 1)	8 bit
Memory Width (Option 2)	16 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Qualification	AEC-Q100
Technology	EEPROM
Voltage - Supply (Maximum)	5.5 V
Voltage - Supply (Minimum)	1.8 V
Write Cycle Time - Page	5 ms
Write Cycle Time - Word	5 ms

M93C46 Series

1 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM

Part	Operating Temperature (Max)	Operating Temperature (Min)	Package Name	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Memory Format	Memory Type	Clock Frequency	Technology	Mounting Type	Memory Interface (Type)	Memory Size	Package Length	Package Width	Write Cycle Time - Word	Write Cycle Time - Page	Memory Width (Option 2)	Memory Organization	Memory Depth (Option 1)	Memory Depth (Option 2)	Memory Width (Option 1)	Qualification	Grade
STMicroelectronics M93C46-WMN6T	85 °C	-40 °C	8-SOIC	2.5 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Surface Mount	Microwire	1 Kbit	0.154 in	3.9 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit
STMicroelectronics M93C46-RDW3TP/K	125 °C	-40 °C	8-TSSOP	1.8 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Surface Mount	Microwire	1 Kbit	0.173 in	4.4 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit	AEC-Q100	Automotive
STMicroelectronics M93C46-MN6	85 °C	-40 °C	8-SOIC	4.5 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Surface Mount	Microwire	1 Kbit	0.154 in	3.9 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit
STMicroelectronics M93C46-BN6	85 °C	-40 °C	8-DIP 8-PDIP	4.5 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Through Hole	Microwire	1 Kbit	0.3 in	7.62 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit
STMicroelectronics M93C46-RMN3TP/K	125 °C	-40 °C	8-SOIC	1.8 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Surface Mount	Microwire	1 Kbit	0.154 in	3.9 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit	AEC-Q100	Automotive
STMicroelectronics M93C46-WDW6TP	85 °C	-40 °C	8-TSSOP	2.5 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Surface Mount	Microwire	1 Kbit	0.173 in	4.4 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit
STMicroelectronics M93C46-WBN6P	85 °C	-40 °C	8-DIP 8-PDIP	2.5 V	5.5 V	EEPROM	Non-Volatile	2 MHz	EEPROM	Through Hole	Microwire	1 Kbit	0.3 in	7.62 mm	5 ms	5 ms	16 bit	128 x 8 64 x 16	128	64	8 bit