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M93C46-WBN6P - 8-DIP

M93C46-WBN6P

Obsolete
STMicroelectronics

IC EEPROM 1KBIT MICROWIRE 8DIP

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M93C46-WBN6P - 8-DIP

M93C46-WBN6P

Obsolete
STMicroelectronics

IC EEPROM 1KBIT MICROWIRE 8DIP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationM93C46-WBN6P
Clock Frequency2 MHz
Memory FormatEEPROM
Memory InterfaceMicrowire
Memory Organization [custom]64, 128
Memory Size128 B
Memory TypeNon-Volatile
Mounting TypeThrough Hole
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case0.3 in
Package / Case8-DIP
Package / Case7.62 mm
Supplier Device Package8-PDIP
TechnologyEEPROM
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]2.5 V
Write Cycle Time - Word, Page5 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

M93C46-A125 Series

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b).

The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C.

Documents

Technical documentation and resources