IPI80P04P405AKSA1
ObsoleteInfineon Technologies
MOSFET P-CH 40V 80A TO262-3
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IPI80P04P405AKSA1
ObsoleteInfineon Technologies
MOSFET P-CH 40V 80A TO262-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI80P04P405AKSA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 125 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPI80P Series
| Part | Vgs (Max) [Max] | Vgs (Max) [Min] | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Grade | Power Dissipation (Max) | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 5 V | -16 V | PG-TO262-3 | 2 V | I2PAK TO-262-3 Long Leads TO-262AA | 30 V | 7.2 mOhm | 80 nC | MOSFET (Metal Oxide) | Through Hole | 5700 pF | 88 W | P-Channel | -55 °C | 175 ░C | 4.5 V 10 V | ||||||
Infineon Technologies | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | 40 V | 5.2 mOhm | 151 nC | MOSFET (Metal Oxide) | Through Hole | 10300 pF | P-Channel | -55 °C | 175 ░C | 10 V | 20 V | Automotive | 125 W | AEC-Q101 | ||||||
Infineon Technologies | 5 V | -16 V | I2PAK TO-262-3 Long Leads TO-262AA | 40 V | 4.7 mOhm | MOSFET (Metal Oxide) | Through Hole | 3800 pF | P-Channel | -55 °C | 175 ░C | 4.5 V 10 V | Automotive | 125 W | AEC-Q101 | 176 nC | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPI80P Series
P-Channel 40 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
Documents
Technical documentation and resources