IPI80P Series

Catalog

MOSFET P-CH 30V 80A TO262-3

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Grade	Power Dissipation (Max)	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPI80P03P4L07AKSA1	5 V	-16 V	PG-TO262-3	2 V	I2PAK TO-262-3 Long Leads TO-262AA	30 V	7.2 mOhm	80 nC	MOSFET (Metal Oxide)	Through Hole	5700 pF	88 W	P-Channel	-55 °C	175 ░C	4.5 V 10 V
Infineon Technologies IPI80P04P405AKSA1				4 V	I2PAK TO-262-3 Long Leads TO-262AA	40 V	5.2 mOhm	151 nC	MOSFET (Metal Oxide)	Through Hole	10300 pF		P-Channel	-55 °C	175 ░C	10 V	20 V	Automotive	125 W	AEC-Q101
Infineon Technologies IPI80P04P4L04AKSA1	5 V	-16 V			I2PAK TO-262-3 Long Leads TO-262AA	40 V	4.7 mOhm		MOSFET (Metal Oxide)	Through Hole	3800 pF		P-Channel	-55 °C	175 ░C	4.5 V 10 V		Automotive	125 W	AEC-Q101	176 nC	2.2 V